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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION *With TO-220C package *Complement to type 2SB546A *Collector current IC=2A *Collector-collector voltage:VCEO=150V(Min) APPLICATIONS *For use in general purpose power amplifier, vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 150 5 2 3 25 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R9jc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V;f=1MHz 40 MIN 150 200 5 2SD401A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 1.0 50 50 200 5 V A A MHz hFE classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD401A Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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